The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : 000000
FW262
N-Channel Silicon MOSFET
FW262
Preliminary Features
• •
Package Dimensions
unit : mm 0000
[FW262]
8 5
0.3 4.4 6.0
Low ON-resistance. 2.5V drive.
5.0
1.5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg
0.595
1.27
0.43
0.1
1.8max
1
4
0.2
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8
Conditions
Ratings 30 ±10 9
Unit V V A A W W °C °C
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2✕0.8mm) Mounted on a ceramic board (1000mm2✕0.8mm)
52 1.7 2.