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FW262 - N-Channel Silicon MOSFET

Key Features

  • Package Dimensions unit : mm 0000 [FW262] 8 5 0.3 4.4 6.0 Low ON-resistance. 2.5V drive. 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Dr.

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Ordering number : 000000 FW262 N-Channel Silicon MOSFET FW262 Preliminary Features • • Package Dimensions unit : mm 0000 [FW262] 8 5 0.3 4.4 6.0 Low ON-resistance. 2.5V drive. 5.0 1.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings 30 ±10 9 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2✕0.8mm) Mounted on a ceramic board (1000mm2✕0.8mm) 52 1.7 2.